Characteristics of P.N. Junction Diode (Ge & Si) and Comparison, Model – D – 01.
FEATURES :
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Builtin Regulated, continuously variable and short circuit proof power supply suitable for the experimental board.
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Circuit is engraved and components are mounted on the top of the painted aluminum sheet to give better and clear understanding.
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A complete working manual containing theory, circuit details and operating instruction supplied with the experimental board.
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Stackable type connecting leads suitable to the terminals are supplied with the board for easy inter – connections and longer life of the terminals.
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Weight : 2.5 Kg Approximately
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Dimension : 210mm × 280mm × 82mm
Experiments :
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Forward and Reverse Characteristics of Germanium Diode.
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Forward Characteristics of Silicon Diode.
Other Apparatus Required :
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Digital Voltmeter. Range : 0 – 20, Volts. One No.
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Digital Milliammeter. Range : 0 – 20, mAmps. One No.
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Digital Milliammeter. Range : 0 – 2, mAmps. One No.
NOTE: There may be any change in specification due to continuous R & D without notice.
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